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| Ordering number : ENA0630 2SC6084 SANYO Semiconductors DATA SHEET 2SC6084 Features * * * * NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C Conditions Ratings 1500 800 5 5 12 1.75 50 150 --55 to +150 Unit V V V A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Fall Time Symbol ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE1 hFE2 tf Conditions VCB=800V, IE=0A VCE=1500V, RBE=0 IC=100mA, IB=0A VEB=4V, IC=0A IC=2.7A, IB=0.54A IC=2.7A, IB=0.54A VCE=5V, IC=0.5A VCE=5V, IC=3A IC=1.8A, IB1=0.36A, IB2=--0.72A 10 5 7 0.2 s 800 1.0 3 1.5 Ratings min typ max 10 1.0 Unit A mA V mA V V Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1306KC TI IM TB-00002398 No. A0630-1/4 2SC6084 Package Dimensions unit : mm (typ) 7507-001 10.2 5.1 2.7 Switching Time Test Circuit 4.5 3.6 1.3 PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 RB + 100F VBE= --5V + 470F VCC=200V RL=111 6.3 14.0 15.1 18.0 (5.6) 1.2 0.8 0.4 123 2.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220 2.55 2.55 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 IC -- VCE 1.5 A 1.4A Collector Current, IC -- A 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 IC -- VBE VCE=5V Collector Current, IC -- A Ta=1 2 0C 25C 0.8 0.4A 0.6A 0.5A 0.3A 0.2A 0.9A 0.8A 0.7A 1.0A 1.1A 0.1A 0.05A 1.2A 1.3A 1 2 3 4 5 6 7 8 IB=0A 9 10 IT11930 0 0 0.2 0.4 0.6 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 2 hFE -- IC Base-to-Emitter Voltage, VBE -- V 10 --40C IT11931 VCE(sat) -- IC VCE=5V 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 100 5 3 2 10 7 5 3 2 1.0 0.01 Ta=120C 25C --40C 7 5 3 2 1.0 7 5 3 2 IC / IB=5 DC Current Gain, hFE 25 0.1 7 5 3 0.01 2 3 5 7 0.1 2 3 C Ta 2 =1 C 0 C --40 5 7 1.0 2 3 5 7 10 IT11933 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT11932 Collector Current, IC -- A Collector Current, IC -- A No. A0630-2/4 2SC6084 7 5 SW Time -- IC tstg Switching Time, SW Time -- s 3 2 Switching Time, SW Time -- s VCC=200V IC / IB2=5 IB2 / IB1=2 R load 10 7 5 3 2 SW Time -- IB2 VCC=200V IC=1.8A IB1=0.36A R load tst g 1.0 7 5 3 2 1.0 7 5 tf 3 2 tf 2 3 5 7 1.0 2 3 5 7 0.1 0.1 0.1 0.1 2 3 5 7 1.0 2 3 IT11935 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Forward Bias A S O ICP=12A IC=5A PC =5 0W Collector Current, IC -- A IT11934 3 Reverse Bias A S O L=500H IB2= --1.0A Tc=25C Single pulse Base Current, IB2 -- A PT 2 Collector Current, IC -- A 0 Collector Current, IC -- A 30 1m s m s 10 DC op er ati on =1 00 s s 10 7 5 3 2 1.0 7 5 3 2 0.1 10 0.01 7 5 3 Tc=25C 2 Single pulse 0.001 23 5 7 10 1.0 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V 2.0 1.8 1.75 5 7 1000 IT11936 2 3 5 7 100 2 3 5 7 1000 2 3 5 PC -- Ta Collector-to-Emitter Voltage, VCE -- V 60 IT11937 PC -- Tc Collector Dissipation, PC -- W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Collector Dissipation, PC -- W 50 N 40 o he at sin k 30 20 10 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT11938 Case Temperature, Tc -- C IT11939 No. A0630-3/4 2SC6084 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No. A0630-4/4 |
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